FF650R17IE4BOSA1
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Specification
| Package | 模块 |
| Pd-Power Dissipation | 4150W |
| 工厂最小包装 | 3 |
| 寿命周期 | 量产 |
| ROHS | no |
| Types | 分立半导体产品,晶体管-IGBT-模块 |
| Collector-emitter saturation voltage | 1700V |
| Termination type | 底座安装 |
| Operating Temperature Range | -40°C~150°C |
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