IXTQ52N30P
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Specification
| Pd-Power Dissipation | 400 W |
| Rds On | 66 mOhms |
| Termination type | Through Hole |
| VDS | 300 V |
| Continuous drain current | 52 A |
| 工厂最小包装 | 30 |
| 寿命周期 | 量产 |
| ROHS | yes |
| Operating Temperature Range | - 55 C~+ 150 C |
| VGS | 20 V |
| Height | 20.3 mm |
| Package | TO-3P-3 |
| Transistor polarity | MOSFET |
| Length | 15.8 mm |
| Width | 4.9 mm |
| Circuit Branch Number | 1 Channel |
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