C3M0065090J

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Specification
VDS | 900 V |
Termination type | SMD/SMT |
Continuous drain current | 35 A |
Pd-Power Dissipation | 113 W |
Rds On | 90 mOhms |
工厂最小包装 | 50 |
寿命周期 | 量产 |
ROHS | no |
Transistor polarity | Silicon Carbide MOSFET |
Qg | 30 nC |
VGS | 18 V, - 8 V |
Circuit Branch Number | 1 Channel |
Package | TO-263-7 |
Operating Temperature Range | - 55 C~+ 150 C |
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