TISP61089DR-S
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Specification
| Package | SOIC-8 |
| 工厂最小包装 | 1 |
| 寿命周期 | 量产 |
| ROHS | no |
| Height | 1.55 mm |
| Off-state voltage (Vdrm) | 100 V |
| Holding Current | 150mA |
| Maximum Breakover Current IBO | - 57 V |
| Length | 5 mm |
| Width | 4 mm |
| Transistor type | Dual Forward Conducting P-Gate Thyristors |
| Termination type | SMD/SMT |
| Gate trigger current | - 5 uA |
| Operating Temperature Range | - 40 C~+ 85 C |
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