SQD50N10-8M9L_GE3

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Specification
Pd-Power Dissipation | 136 W |
Qualification level | AEC-Q101 |
Package | TO-252-3 |
Continuous drain current | 50 A |
工厂最小包装 | 2000 |
寿命周期 | 量产 |
ROHS | yes |
Rds On | 8.9 mOhms |
Qg | 46 nC |
Operating Temperature Range | - 55 C~+ 175 C |
Termination type | SMD/SMT |
VDS | 100 V |
Transistor polarity | MOSFET |
Circuit Branch Number | 1 Channel |
VGS | 10 V |
SQD50N10-8M9L_GE3 Releted Information
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