SQD50N10-8M9L_GE3
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Specification
| Qualification level | AEC-Q101 |
| Pd-Power Dissipation | 136 W |
| Package | TO-252-3 |
| Continuous drain current | 50 A |
| 工厂最小包装 | 2000 |
| 寿命周期 | 量产 |
| ROHS | yes |
| Qg | 46 nC |
| Operating Temperature Range | - 55 C~+ 175 C |
| Termination type | SMD/SMT |
| Circuit Branch Number | 1 Channel |
| Rds On | 8.9 mOhms |
| VDS | 100 V |
| Transistor polarity | MOSFET |
| VGS | 10 V |
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