SIZ998DT-T1-GE3

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Specification
Continuous drain current | 20 A, 60 A |
Termination type | SMD/SMT |
Pd-Power Dissipation | 20.2 W, 32.9 W |
Rds On | 4.7 mOhms, 2.2 mOhms |
VDS | 30 V |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Qg | 18 nC, 44.3 nC |
Height | 0.8 mm |
Transistor polarity | MOSFET |
Package | PowerPair®-8 |
Circuit Branch Number | 2 Channel |
Operating Temperature Range | - 55 C~+ 150 C |
Length | 6 mm |
Width | 5 mm |
VGS | - 16 V, 20 V |
SIZ998DT-T1-GE3 Releted Information
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