SI5403DC-T1-GE3

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Specification
Pd-Power Dissipation | 6.3 W |
Package | ChipFET-8 |
Continuous drain current | 6 A |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Qg | 28 nC |
Height | 1.1 mm |
Width | 1.65 mm |
Operating Temperature Range | - 55 C~+ 150 C |
VGS | 10 V |
Length | 3.05 mm |
Circuit Branch Number | 1 Channel |
Termination type | SMD/SMT |
Transistor polarity | MOSFET |
Rds On | 30 mOhms |
VDS | 30 V |
SI5403DC-T1-GE3 Releted Information
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