SI4816BDY-T1-GE3

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Specification
VDS | 30V |
Rds On | 11.5 mOhms, 18.5 mOhms |
Pd-Power Dissipation | 1.4 W, 2.4 W |
Continuous drain current | 6.8 A, 11.4 A |
Termination type | SMD/SMT |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Package | SOIC-8 |
Operating Temperature Range | - 55 C~+ 150 C |
Length | 4.9 mm |
Width | 3.9 mm |
Circuit Branch Number | 2 Channel |
VGS | 10 V |
Qg | 7.8 nC, 11.6 nC |
Height | 1.75 mm |
Transistor polarity | MOSFET |
SI4816BDY-T1-GE3 Releted Information
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