SI2312BDS-T1-GE3

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Specification
Continuous drain current | 3.9 A |
Pd-Power Dissipation | 0.75 W |
Package | SOT-23-3 |
工厂最小包装 | 3000 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Transistor polarity | MOSFET |
Rds On | 31 mOhms |
Qg | 7.5 nC |
Height | 1.45 mm |
VGS | 4.5 V |
VDS | 20 V |
Termination type | SMD/SMT |
Operating Temperature Range | - 55 C~+ 150 C |
Length | 2.9 mm |
Width | 1.6 mm |
Others include "SI2312BDS-T1-GE3" parts
The following parts include 'SI2312BDS-T1-GE3'
SI2312BDS-T1-GE3 Releted Information
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