T835-600B-TR

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Specification
Gate trigger voltage | 1.3V |
Package | DPAK |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Transistor type | 双向可控硅 |
Off-state voltage (Vdrm) | 600 V |
On-state rms current | 8A |
Termination type | SMD/SMT |
Holding Current | 35mA |
Gate trigger current | 35 mA |
Operating Temperature Range | - 40 C~+ 125 C |
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