IPD35N10S3L26ATMA1

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Specification
Rds On | 20 mOhms |
Pd-Power Dissipation | 71 W |
Continuous drain current | 35 A |
Qualification level | AEC-Q101 |
VDS | 100 V |
Termination type | SMD/SMT |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | no |
Circuit Branch Number | 1 Channel |
Qg | 39 nC |
Height | 2.3 mm |
Package | PG-TO252-3-11 |
Transistor polarity | MOSFET |
Length | 6.5 mm |
Width | 6.22 mm |
VGS | 20 V |
Operating Temperature Range | - 55 C~+ 175 C |
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IPD35N10S3L26ATMA1 Releted Information
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