BSO615N G

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Specification
Package | SOIC-8 |
Pd-Power Dissipation | 2 W |
Continuous drain current | 2.6 A |
工厂最小包装 | 2500 |
寿命周期 | 量产 |
ROHS | yes |
Rds On | 120 mOhms |
Qg | 20 nC |
Transistor polarity | MOSFET |
VGS | 20 V |
VDS | 60 V |
Height | 1.75 mm |
Circuit Branch Number | 2 Channel |
Width | 3.9 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Termination type | SMD/SMT |
Length | 4.9 mm |
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