IXTH1N200P3

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Specification
Continuous drain current | 1 A |
Pd-Power Dissipation | 125 W |
VDS | 2 kV |
Rds On | 40 Ohms |
Termination type | Through Hole |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | no |
Qg | 23.5 nC |
Package | TO-247-3 |
VGS | 20 V |
Transistor polarity | MOSFET |
Operating Temperature Range | - 55 C~+ 150 C |
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