IXKN75N60C

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Specification
Pd-Power Dissipation | 560W(Tc) |
VDS | 600 V |
Termination type | Chassis Mount |
Rds On | 30 mOhms |
Continuous drain current | 75 A |
工厂最小包装 | 10 |
寿命周期 | 量产 |
ROHS | no |
Package | SOT-227-4 |
Qg | 500 nC |
Circuit Branch Number | 1 Channel |
Transistor polarity | CoolMOS Power MOSFET |
Length | 38.23 mm |
Width | 25.42 mm |
Operating Temperature Range | - 55 C~+ 150 C |
Height | 12.22 mm |
VGS | 20 V |
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