IXFH20N100P

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Specification
Pd-Power Dissipation | 660 W |
Continuous drain current | 20 A |
VDS | 1 kV |
Rds On | 570 mOhms |
Termination type | Through Hole |
工厂最小包装 | 30 |
寿命周期 | 量产 |
ROHS | no |
Package | TO-247-3 |
Transistor polarity | Polar Power MOSFET HiPerFET |
VGS | 30 V |
Operating Temperature Range | - 55 C~+ 150 C |
Circuit Branch Number | 1 Channel |
Qg | 126 nC |
Height | 21.46 mm |
Length | 16.26 mm |
Width | 5.3 mm |
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